Weebit Nano tapes out embedded ReRAM test chips at onsemi production fab
MWN-AI** Summary
Weebit Nano Limited (ASX: WBT), a prominent developer of advanced memory technologies, has announced a significant achievement in its collaboration with onsemi. The company has successfully taped out test chips featuring its embedded Resistive Random Access Memory (ReRAM) module at onsemi's 300mm production facility in East Fishkill, New York. This development utilizes onsemi's Treo platform, which is based on a 65nm Bipolar-CMOS-DMOS (BCD) process, marking a crucial milestone in integrating Weebit’s ReRAM into commercial products.
The tape-out of these test chips paves the way for Weebit's ReRAM intellectual property to be incorporated into future onsemi products. This cutting-edge ReRAM technology offers ultra-low power consumption and high-density non-volatile memory (NVM) solutions, crucial for sectors like automotive, industrial automation, artificial intelligence, and the Internet of Things. As technology trends push for higher performance and energy efficiency, Weebit’s ReRAM presents an innovative alternative to traditional flash memory, enabling faster data processing at a lower cost.
Coby Hanoch, CEO of Weebit Nano, expressed his optimism regarding the rapid progress of their collaboration, deeming the tape-out a significant milestone following successful technology transfer. He highlighted the impressive validation of their technology across multiple wafer lots, leading to optimized processes and outstanding performance.
The next steps involve final testing and qualification of the chips as Weebit and onsemi move towards anticipated volume production, setting the stage for next-generation products that utilize this groundbreaking memory technology. For more information, visit Weebit Nano's official website.
MWN-AI** Analysis
Weebit Nano Limited's recent announcement of the successful tape-out of its embedded Resistive Random-Access Memory (ReRAM) test chips at onsemi’s production fab is a pivotal moment for the company and the broader semiconductor market. This milestone not only signifies technological advancement but also highlights the growing importance of advanced memory technologies in various high-demand sectors, including automotive, AI, and IoT applications.
From an investment perspective, Weebit Nano (ASX: WBT) appears to be in a strong position. The collaboration with onsemi, a prominent player in the semiconductor industry, enhances Weebit's credibility and market reach. The Treo platform’s integration with Weebit’s ReRAM technology means significant potential for future products that require ultra-low power and high-density non-volatile memory.
As companies strive for improved power efficiency and performance, Weebit’s offerings are timely and relevant. The transition from traditional flash memory to ReRAM could enable faster, cheaper, and more reliable solutions, which are critical for the evolving landscape of smart devices and AI infrastructures. Investors should note the anticipated transition to volume production and the upcoming qualification of these test chips, as successful outcomes could drive demand and market adoption.
Furthermore, given the rising importance of non-volatile memory in sectors such as automotive, where reliability is paramount, Weebit’s focus aligns well with industry trends towards smarter and more efficient technologies.
In conclusion, prospective investors might consider taking a bullish approach towards Weebit Nano, particularly as it continues its collaboration with onsemi and moves closer to mass production. Monitoring developments around the qualification of these chips will be key, as it may establish Weebit as a leader in next-generation memory applications.
**MWN-AI Summary and Analysis is based on asking OpenAI to summarize and analyze this news release.
HOD HASHARON, Israel, Oct. 05, 2025 (GLOBE NEWSWIRE) -- Weebit Nano Limited ( ASX:WBT ) (Weebit), a leading developer and licensor of advanced memory technologies for the global semiconductor industry, has successfully taped-out (released to manufacturing) test chips featuring its embedded Resistive Random-Access Memory (ReRAM) module at onsemi’s 300mm production fab in East Fishkill, NY. The chips are being developed in onsemi’s Treo platform, which is a 65nm Bipolar-CMOS-DMOS (BCD) process. onsemi (Nasdaq: ON) is a U.S. based company that delivers intelligent power and sensing solutions for the automotive, industrial and AI data center markets.
This tape-out represents a key milestone towards enabling Weebit ReRAM IP on onsemi’s Treo™ platform. For Treo-based designs, Weebit ReRAM provides an ultra-low-power, high density NVM that unlocks new levels of intelligence and functionality. onsemi’s next-generation products are expected to use this breakthrough memory technology. The test chips will now be used for final testing and qualification ahead of anticipated volume production.
Coby Hanoch, CEO of Weebit Nano, said: “Our collaboration with onsemi is progressing rapidly, and this successful tape-out marks a major milestone in completing the technology transfer of Weebit ReRAM to onsemi’s advanced BCD process. We’ve already validated our technology on multiple wafer lots using onsemi’s tools and flow, optimising the process and demonstrating solid performance and reliability. We’re now progressing towards qualification.”
About Weebit Nano Limited
Weebit Nano Ltd. is a leading developer and licensor of advanced semiconductor memory technology. The company’s ground-breaking Resistive RAM (ReRAM) non-volatile memory (NVM) addresses the growing need for significantly higher performance and lower power memory solutions in a range of electronic products such as AI, Internet of Things (IoT) and wearable devices, automotive, industrial automation, robotics, neuromorphic computing, and many others. For these applications, Weebit ReRAM allows semiconductor memory elements to be significantly faster, less expensive, more reliable and more energy efficient than those using existing flash memory solutions. As it is based on fab-friendly materials, the technology can be quickly and easily integrated with existing flows and processes, without the need for special equipment or large investments. See www.weebit-nano.com .
Weebit Nano and the Weebit Nano logo are trademarks or registered trademarks of Weebit Nano Ltd. in the United States and other countries. Other company, product, and service names may be trademarks or service marks of others.
Media – US
Jen Bernier-Santarini, Weebit Nano
P: +1 650-336-4222
E: jen@weebit-nano.com
Media – Australia
Jasmine Walters, Automic Group
P: +61 498 209 019
E: jasmine.walters@automicgroup.com.au
Investors
Danny Younis, Automic Group
P: +61 420 293 042
E: danny.younis@automicgroup.com.au
FAQ**
How will the successful tape-out of Weebit Nano's ReRAM module at ON Semiconductor Corporation ON's Treo platform impact the competitive landscape in the semiconductor memory market?
What specific performance metrics and advantages does Weebit Nano's ReRAM offer compared to traditional flash memory solutions, particularly in products developed by ON Semiconductor Corporation ON?
Can you detail the timeline for the qualification and volume production phase of Weebit Nano's ReRAM with ON Semiconductor Corporation ON, and what challenges do you anticipate during this process?
How does Weebit Nano plan to leverage its collaboration with ON Semiconductor Corporation ON to expand its market reach in applications such as AI and IoT?
**MWN-AI FAQ is based on asking OpenAI questions about Weebit Nano (OTC: WBTNF).
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