ROHM Builds the Future of AI with Optimized Solutions for NVIDIA 800V Architecture
MWN-AI** Summary
ROHM Semiconductor has positioned itself as a pivotal player in the evolution of data center infrastructure, collaborating with NVIDIA to support the 800 V High Voltage Direct Current (HVDC) architecture, enhancing the performance of megawatt-scale AI facilities. As demand for artificial intelligence continues to soar, the need for efficient and sustainable power solutions becomes paramount. ROHM’s extensive power device offerings, including silicon and wide bandgap technologies such as silicon carbide (SiC) and gallium nitride (GaN), are indispensable for data center designers.
A notable innovation in ROHM's portfolio is the RY7P250BM, a 100V power MOSFET highly endorsed for its superior performance in hot-swap circuits, essential for AI servers utilizing 48V power systems. This device boasts an optimal Safe Operating Area (SOA) alongside ultra-low ON resistance, contributing to significant power efficiency and reliability—key for high-density cloud platforms.
As data centers transition to the 800V architecture, ROHM’s SiC MOSFETs excel in high-voltage environments, presenting enhanced efficiency with reduced power losses and increased thermal stability. These features align seamlessly with NVIDIA's initiative to convert 13.8kV AC from the grid into 800V DC, addressing issues prevalent with traditional rack power systems, including copper overload and inefficient energy conversion.
Additionally, ROHM’s EcoGaN™ technologies offer robust solutions in the 100V to 650V range, with improved switching performance. The company also provides high-power SiC modules designed for optimal performance in AC-DC converters, tailored for the demanding requirements of NVIDIA's data center vision.
In summary, ROHM’s innovation in power semiconductor technology is crucial for fostering a sustainable and efficient future in AI data centers, making them a strategic partner in the advancements of NVIDIA’s 800V infrastructure.
MWN-AI** Analysis
As companies continue to pivot towards artificial intelligence (AI) technology, investing in firms that prioritize advanced semiconductor solutions stands out as a compelling strategy. ROHM Semiconductor’s recent advancements in supporting NVIDIA's 800V High Voltage Direct Current (HVDC) architecture exemplify the intersection of cutting-edge product development and growing market needs.
ROHM provides a robust portfolio of power devices combining silicon and wide bandgap technologies, such as SiC and GaN. These materials are pivotal for optimizing data center performance, particularly in high-density and high-power environments. The company’s emphasis on efficiency—evidenced by the introduction of the RY7P250BM MOSFET, tailored for hot-swap circuits—addresses fundamental industry challenges like power loss and system reliability. As data centers move from traditional 12V systems to 48V and above, ROHM's innovations align well with industry trends, placing it advantageously for growth.
The emergence of NVIDIA's 800V architecture represents a significant shift in infrastructure design, focusing on efficiency and sustainability. ROHM's capabilities in SiC devices, noted for their superior thermal stability and reduced energy losses, ensure compatibility with this new standard, further enhancing their investment potential.
Furthermore, ROHM's commitment to developing EcoGaN™ technology demonstrates foresight in catering to the evolving landscape of smaller, high-performance power systems—a necessity in AI applications. Notably, the growing demand for higher efficiency across data centers creates ripe opportunities for ROHM’s high-power SiC modules within NVIDIA's forward-looking framework.
In conclusion, investors should consider ROHM Semiconductor a strategic entry point into the burgeoning AI-driven market. The company's innovative approach to power semiconductors not only positions it as a critical partner in the expanding AI ecosystem but also offers significant upside potential as demand for efficient, sustainable technology solutions continues to soar.
**MWN-AI Summary and Analysis is based on asking OpenAI to summarize and analyze this news release.
Santa Clara, CA, June 12, 2025 (GLOBE NEWSWIRE) -- As artificial intelligence continues to redefine the boundaries of computing, the infrastructure powering these advancements must evolve in parallel. A recognized leader in power semiconductor technology, ROHM is proud to be among the key silicon providers supporting NVIDIA’s new 800 V High Voltage Direct Current (HVDC) architecture. This marks a pivotal shift in data center design, enabling megawatt-scale AI factories that are more efficient, scalable, and sustainable.
ROHM’s power device portfolio spans both silicon and wide bandgap technologies, including silicon carbide (SiC) and gallium nitride (GaN), offering a strategic path for data center designers. The company’s silicon MOSFETs are already widely adopted across automotive and industrial sectors, providing a cost-effective and reliable solution for today’s power conversion needs. These are ideal for applications where price, efficiency, and reliability must be balanced, making them a strong fit for transitional stages of AI infrastructure development.
A standout example is the RY7P250BM, a 100V power MOSFET endorsed by major global cloud providers designed specifically for hot-swap circuits in 48V power systems—an essential component in AI servers. Key features include best-in-class SOA (Safe Operating Area) performance and ultra-low ON resistance (1.86 m?) in a compact 8080 package. These characteristics help reduce power loss and improve system reliability—crucial requirements in high-density, high-availability cloud platforms. As data centers transition from 12V to 48V and beyond, hot-swap capability becomes critical for maintaining uptime and protecting against inrush currents.
Industrial-grade rectification with minimal losses is an area where ROHM’s SiC devices excel and align with NVIDIA’s plans to begin large-scale deployment of its 800V HVDC data center architecture to power 1 MW compute racks and beyond. At the heart of NVIDIA’s new infrastructure is the conversion of 13.8kV AC from the grid directly into 800V DC. The initiative is designed to address the inefficiencies of traditional 54V rack power systems, which are constrained by physical space, copper overload, and conversion losses.
ROHM’s SiC MOSFETs deliver superior performance in high-voltage, high-power environments, offering higher efficiency through reduced switching and conduction losses, greater thermal stability for compact, high-density systems, and proven reliability in mission-critical applications. These characteristics align perfectly with the requirements of the NVIDIA 800 V HVDC architecture, which aims to reduce copper usage, minimize energy losses, and simplify power conversion across the data center.
Complementing SiC, ROHM is advancing gallium nitride technologies under the EcoGaN™ brand. While SiC is best-suited for high voltage, high current applications, GaN offers exceptional performance in the 100V to 650V range, with superior breakdown field strength, low ON resistance, and ultra-fast switching. ROHM’s broad EcoGaN TM lineup includes 150V and 650V GaN HEMTs, gate drivers, and integrated power stage ICs. At the same time, proprietary Nano Pulse Control TM technology further improves switching performance, reducing pulse widths to as low as 2ns. These innovations support the growing demand for smaller, more efficient power systems in AI data centers.
Beyond discrete devices, ROHM offers a lineup of high-power SiC modules, including top-side cooling molded packages such as the HSDIP20, equipped with advanced 4th Gen SiC chips. These 1200V SiC modules are optimized for LLC topologies in AC-DC converters and primary-side applications in DC-DC converters. Engineered for high-efficiency, high-density power conversion, they are particularly well-suited for the centralized power systems envisioned in NVIDIA’s architecture. Their robust thermal performance and scalability make them ideal for 800 V busways and MW-scale rack configurations.
The transition to an 800V HVDC infrastructure is a collaborative effort. ROHM is committed to working closely with industry leaders like NVIDIA as well as data center operators and power system designers to provide the foundational silicon technologies needed for this next generation of AI factories. Our expertise in power semiconductors, particularly in wide-bandgap materials like SiC and GaN, positions us as a key partner in developing solutions that are not only powerful but also contribute to a more sustainable and energy-efficient digital future.
Heike MuellerROHM Semiconductor+1-408-720-1900hmueller@rohmsemiconductor.com
FAQ**
How does ROHM Company Limited (ROHCF) plan to further innovate within the power semiconductor market to support the growing demand for AI data centers transitioning to 800V HVDC architecture?
In what ways does ROHM Company Limited (ROHCF) ensure the reliability and efficiency of its silicon carbide (SiC) and gallium nitride (GaN) products in high-density AI infrastructure?
What specific partnerships does ROHM Company Limited (ROHCF) maintain with other industry leaders to enhance the deployment of megawatt-scale AI factories while ensuring sustainability?
How is ROHM Company Limited (ROHCF) addressing the challenges of power conversion losses in traditional data center systems as they evolve towards 800V HVDC infrastructure?
**MWN-AI FAQ is based on asking OpenAI questions about Rohm Company Limited (OTC: ROHCF).
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