Tower Semiconductor and pSemi Win the Prestigious Industry Paper Competition Award at IMS 2025
MWN-AI** Summary
Tower Semiconductor, a leading foundry for high-value analog semiconductor solutions, made headlines on July 8, 2025, after winning the prestigious Industry Paper Competition Award at the 2025 IEEE International Microwave Symposium (IMS). The award was given for their co-authored paper with pSemi, titled “A Low-Loss, Wideband, 0–110 GHz SPDT Using PCM RF Switches with Integrated CMOS Drivers.” This paper was presented during a dedicated session on innovative RF switch technologies on June 19, 2025, and was recognized as the Best Paper in its category.
The award-winning research highlights Tower's advancements in RF switch technology, particularly the innovative PCM RF switch which boasts remarkable specifications. These include an unprecedented bandwidth of DC–110 GHz, an insertion loss of less than 2 dB, a power handling capacity of 30 dBm, and significant linearity improvements of 15–20 dB over existing RFSOI CMOS solutions. This advancement is made possible through Tower's proprietary back-end-of-line (BEOL) integration and integrated digital control, simplifying implementation for end users.
Dr. Ed Preisler, Vice President and General Manager of Tower's RF Business Unit, expressed honor in receiving the award, emphasizing the company's commitment to advancing RF front-end integration for next-generation wireless devices. Rodd Novak, Vice President of Sales and Marketing at pSemi, shared similar sentiments, noting that the recognition reflects their team's dedication to advancing wideband RF switch research.
As Tower Semiconductor continues to push the boundaries of RF technology, its innovations play a critical role in enabling advanced circuits for future 5G, 6G, SatCom, and millimeter-wave applications, solidifying the company's leadership in the semiconductor industry. For further details about Tower’s offerings, visit their official website.
MWN-AI** Analysis
Tower Semiconductor (NASDAQ/TASE: TSEM) has positioned itself at the forefront of the RF semiconductor market with its recent Industry Paper Competition Award at the 2025 IEEE International Microwave Symposium (IMS). This recognition highlights their innovation in wideband RF switch technology developed in collaboration with pSemi. The groundbreaking paper showcased Tower's PCM RF switch, which features remarkable performance metrics — a bandwidth of DC to 110 GHz, insertion loss below 2 dB, and improved power handling capabilities.
This achievement not only solidifies Tower’s leadership in advanced RF technology but also enhances its portfolio's attractiveness to diverse markets, including 5G, future 6G, and Satellite Communication. The implications of this advancement are profound for applications requiring high-frequency operations, making Tower a strategic partner for companies looking to enhance their RF front-end solutions.
From an investment perspective, Tower Semiconductor's recognition and leadership in innovation position the company favorably for future growth. The global demand for high-performance RF technologies is expected to accelerate, driven by trends in telecommunications and the increasing complexity of communication networks. As Tower continues to advance its offerings in combination with strategic partnerships like that with pSemi, it may attract more clients across various sectors, further solidifying its market share.
For investors, this is a moment to closely monitor Tower Semiconductor’s stock (TSEM). The positive reception to their technology innovations can lead to increased revenues and market share. Given its focus on both organic growth through innovation and potential collaborations, Tower is likely to experience upward momentum in shares. Nevertheless, investors should remain aware of the inherent risks in the semiconductor sector and monitor macroeconomic factors impacting supply chains and technology adoption. Preparing for potential volatility while capitalizing on future growth trends could yield worthwhile returns.
**MWN-AI Summary and Analysis is based on asking OpenAI to summarize and analyze this news release.
Award-winning paper showcases breakthroughs in wideband RF switch performance, reinforcing Tower’s leadership in advanced RF front-end innovation
MIGDAL HAEMEK, Israel — July 08, 2025 — Tower Semiconductor (NASDAQ/TASE: TSEM), a leading foundry of high-value analog semiconductor solutions, today announced receipt of the Industry Paper Competition Award at the 2025 IEEE International Microwave Symposium (IMS) for their co-authored paper with pSemi — “A Low-Loss, Wideband, 0–110 GHz SPDT Using PCM RF Switches with Integrated CMOS Drivers”. The paper was presented on June 19, 2025, during IMS’s session on Innovative RF Switches, Varactor and Modulator Technologies , and won the Best Paper Award in its category.
The award recognizes Tower’s PCM RF switch as a significant innovation and advancement in RF switch technology, capable of delivering a record-breaking combination of bandwidth (DC–110 GHz), insertion loss (<2 dB), power handling (30 dBm), and linearity (+15–20 dB improvement over RFSOI CMOS solutions) — results that have not been achieved by any other RF switch technology. Enabled by Tower’s proprietary BEOL integration and integrated digital control, this combination of ultra-low-loss wideband performance, power handling, and full CMOS integration simplifies implementation for end users and enables advanced circuits for 5G, future 6G, SatCom, beamforming, and millimeter-wave applications.
“We’re honored to receive this recognition,” said Dr. Ed Preisler, Vice President and General Manager of the RF Business Unit. “This achievement reinforces our commitment to advancing RF front-end integration for the next wave of wireless devices and highlights the power of strategic partnerships like ours with pSemi.”
"We are honored to be recognized by IMS alongside Tower Semiconductor," said Rodd Novak, Vice President, Sales and Marketing, pSemi . "This award reflects our team's dedication to pushing the boundaries of wideband RF switch research and design."
For additional information about the Company’s RF platform offering, visit here .
About Tower Semiconductor
Tower Semiconductor Ltd. (NASDAQ/TASE: TSEM), the leading foundry of high-value analog semiconductor solutions, provides technology, development, and process platforms for its customers in growing markets such as consumer, industrial, automotive, mobile, infrastructure, medical and aerospace and defense. Tower Semiconductor focuses on creating a positive and sustainable impact on the world through long-term partnerships and its advanced and innovative analog technology offering, comprised of a broad range of customizable process platforms such as SiGe, BiCMOS, mixed-signal/CMOS, RF CMOS, CMOS image sensor, non-imaging sensors, displays, integrated power management (BCD and 700V), photonics, and MEMS. Tower Semiconductor also provides world-class design enablement for a quick and accurate design cycle as well as process transfer services including development, transfer, and optimization, to IDMs and fabless companies. To provide multi-fab sourcing and extended capacity for its customers, Tower Semiconductor owns one operating facility in Israel (200mm), two in the U.S. (200mm), two in Japan (200mm and 300mm) which it owns through its 51% holdings in TPSCo, shares a 300mm facility in Agrate, Italy with STMicroelectronics as well as has access to a 300mm capacity corridor in Intel’s New Mexico factory. For more information, please visit: www.towersemi.com .
Safe Harbor Regarding Forward-Looking Statements
This press release includes forward-looking statements, which are subject to risks and uncertainties. Actual results may vary from those projected or implied by such forward-looking statements. A complete discussion of risks and uncertainties that may affect the accuracy of forward-looking statements included in this press release or which may otherwise affect Tower’s business is included under the heading “Risk Factors” in Tower’s most recent filings on Forms 20-F, F-3, F-4 and 6-K, as were filed with the Securities and Exchange Commission (the “SEC”) and the Israel Securities Authority. Tower does not intend to update, and expressly disclaim any obligation to update, the information contained in this release.
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Tower Semiconductor Company Contact: Orit Shahar | +972-74-7377440 | oritsha@towersemi.com
Tower Semiconductor Investor Relations Contact: Liat Avraham | +972-4-6506154 | liatavra@towersemi.com
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FAQ**
What specific advantages does the low-loss, wideband SPDT RF switch from Tower Semiconductor Ltd. TSEM offer compared to traditional RF switch technologies, particularly in terms of bandwidth, insertion loss, and power handling?
How does the partnership between Tower Semiconductor Ltd. TSEM and pSemi contribute to the ongoing innovations in RF switch technology, as demonstrated in their award-winning paper at the IEEE International Microwave Symposium?
In what ways does Tower Semiconductor Ltd. TSEM's proprietary BEOL integration enhance the performance and implementation of their RF switches for applications like 5G and future 6G technologies?
What strategic implications does winning the Best Paper Award at the IEEE IMS have for Tower Semiconductor Ltd. TSEM in terms of future research and product development in the RF semiconductor sector?
**MWN-AI FAQ is based on asking OpenAI questions about Tower Semiconductor Ltd. (NASDAQ: TSEM).
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