China is looking into ways to independently manufacture high-bandwidth memory (HBM), a new generation of AI-specific memory chips, to achieve semiconductor self-sufficiency amid sanctions from the U.S., South China Morning Post reported.
Industry insiders reveal that it may be a challenging endeavor to compete with global leaders like SK Hynix, Samsung Electronics (OTC:SSNLF) and Micron Technology (NASDAQ:MU) but the Chinese government is committed to becoming self-reliant in HBMs, regardless of the time it takes.
ChangXin Memory Technologies (CXMT), China’s leading dynamic random access memory (DRAM) manufacturer, is poised to lead the HBM initiative, though it may take up to four years to market the products.
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If Chinese chip makers proceed, they will have to resort to using less advanced technologies to fabricate powerful ...